| PART |
Description |
Maker |
| SRP1204-1R8M BOURNSINC-SRP1204-1R8M |
MAGNETICS - High Current Power Inductors 1 ELEMENT, 2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
| SDR0503-390KL SDR0503-821KL SDR0503-122JL SDR0503- |
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 820 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 1200 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 5600 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductor; Series:SDR0503; Inductance:47uH; Inductance Tolerance: /- 10 %; Q Factor:20; Self Resonant Frequency:14MHz; Terminal Type:PCB Surface Mount; Core Material:Ferrite DR; Current Rating:750mA; Mounting Type:Surface Mount
Power Inductor; Inductor Type:Power; Inductance:3.3mH; Inductance Tolerance: 5 %; Current Rating:0.062A; Series:SDR0503; Core Material:Ferrite DR; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Q Factor:40 RoHS Compliant: Yes
|
Bourns, Inc.
BOURNS INC
|
| BDP948 BDP950 Q62702-D1338 Q62702-D1336 |
From old datasheet system
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
SIEMENS A G
|
| BCP72 |
PNP Silicon AF Power Transistor (For AF driver and output stages High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SRP1270-1R8M SRP1270-8R2M |
1 ELEMENT, 1.8 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD ROHS COMPLIANT
MAGNETICS - High Current Power Inductors 1 ELEMENT, 8.2 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| NTE29 NTE30 |
50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
Silicon Complementary Transistors High Power, High Current Switch
|
NTE[NTE Electronics]
|
| BFY50 BFY51 BFY52 |
ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
NPN medium power transistors
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUX81 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex Power Semiconductors
Mitsubishi Electric Corporation
|
| HS-1135RH 5962F9676701VPC HS7-1135RH/PROTO HS7-113 |
Radiation Hardened, High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting
Radiation Hardened/ High Speed/ Low Power Current Feedback Amplifier with Programmable Output Limiting
Operational Amplifier
CONNECTOR ACCESSORY 1 CHANNEL, VIDEO AMPLIFIER, CDIP8
Op Amp, High Speed, Current Feedback, 360MHz, Slew Rate 1200V/s, Rad-Hard
|
Intersil Corporation
Intersil, Corp.
|
